Optoelectronic Integrated Circuits Fabricated Using Atomic Layer Epitaxy
Abstract
The interest in monolithic integration of optoelectronic devices based on III-V semiconductors has presented a great challenge to crystal growth and device processing. Laser assisted atomic layer epitaxy (LALE) is attracting increased attention as a candidate to meet the challenge because it offers localized deposition at a control of layer thickness, doping profile, and interface roughness on an atomic scale: This work starts with a detailed study of the gas phase thermal decomposition of trimethylgallium (TMGa) and its relevance to atomic layer epitaxy (ALE) using molecular beam sampling mass spectrometry. The growth of GaAs by LALE is then first studied using triethylgallium (TMGa) and arsine (AsH3) as precursors. The influence of growth chemistry on the carbon contamination in the epilayers is further studied by using combinations of TMGa and tertiarybutylarsine (TBAs) and triethylgallium (TEGa) and AsH3. The device application of the growth technique is demonstrated for the first time through laser diodes with the GaAs QW grown by LALE Laser Assisted Atomic Layer Epitaxy(LALE)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1993
- Accession Number
- ADA275454
Entities
People
- Paul Daniel Dapkus
Organizations
- University of Southern California