Innovative Optoelectronic Materials and Structures Using OMVPE.
Abstract
An advanced OMVPE process is being developed for the deposition of III-V semiconductor materials and structures. There are important optoelectronic device structures which can not be realized be conventional means. The new OMVPE apparatus combines the multichamber reaction cell with deep UV photo-assisted growth and modulation flow epitaxial techniques. Using a combination of such processes, the-growth temperature requirements for III-V alloys can be substantially reduced. Selective growth on a sub-micron scale will be attempted with in-situ interference holography. The materials and techniques developed in this research program will result in Significant simplifications to the fabrication o sequence required to realize complex integrated optoelectronic circuits. Semiconductors, Optoelectronics, Crystal growth.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 14, 1994
- Accession Number
- ADA275811
Entities
People
- James R. Shealy
Organizations
- Cornell University College of Engineering