1-Picosecond InGaAs Photodetector for Operation at 1300-1600 nm
Abstract
During the past two months we have grown a number of new InGaAs structures and characterized them for sensitivity, speed, resistivity, and optical absorption. Based on our findings we have decided to shift emphasis away from further work on mismatched epilayers grown on either GaAs or InP. We have concentrated on two new approaches that promise to shorten carrier lifetime while maintaining high sensitivity, and resistivity. The first approach involves growing a superlattice of low-temperature MBE InGaAs/InAlAs with post annealing, i.e. InGaAs:As/InAlAs:As. (We use the following convention: low-temperature grown but without post-annealing is referred to as LT-InGaAs/GaAs, low- temperature grown with annealing is referred to as InGaAs:As/InAlAs:As). In this structure, the InGaAs:As serves as an absorbing layer while the InAlAs:As as a trapping layer. The III-V materials group at Martin Marietta has grown these samples for us. We discuss our initial results in this report. The second approach, for which samples are now being grown, uses lattice-matched bulk (i.e. no superlattice) InGaAs:As.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 15, 1993
- Accession Number
- ADA275959