Indium-Vacancy Complexes in Mercury Cadmium Telluride
Abstract
This goals of this research were to study specific defect configurations in Hg(0.79) Cd(0.21) Te (MCT), using perturbed angular correlation (PAC) measurements, with emphasis on the defect consisting of vacancies trapped at the donor impurity indium; secondarily, to study antisite defects and small indium precipitates. The first of these objectives was met with the identification and structural characterization of the In-V (Hg) complexes. It was determined that this defect does occur under appropriate conditions (reported in several publications), and that it consists of an indium impurity on a cation site, joined to a single vacancy at the <110> next site. The mysterious <111> orientation of the electric field gradient (EFG) observed for donor-vacancy complexes in MCT and other II-VI semiconductor was shown to result from the polarization of Te atoms surrounding the indium donor. The thermodynamics of the mercury vacancy and indium-vacancy complexes were extensively characterized, resulting in good estimates of the migration energy for Hg vacancies and binding energies for vacancy-indium pairs. In-V (Hg) complexes were seen to interact with H impurities. No evidence of either antisite defects or small metal clusters was seen at doping levels up to 10(exp 17)In/cu cm.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1993
- Accession Number
- ADA276177
Entities
People
- J. C. Austin
- M. L. Swanson
- William C. Huges
Organizations
- University of North Carolina at Chapel Hill