Annual Report for Contract N00014-90-J-1267. (Illinois University, Loomis Laboratory of Physics)

Abstract

The objective is to understand the electronic structures of semiconductor surfaces and heterostructures in relation to crystal growth. The approach is to perform first-principle theoretical calculations to determine the structures of surface and interface identify the main spectral features of the reflectance-difference spectra of (001) GaAs with transitions involving Ga-Ga dimers and As-As dimers.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Feb 14, 1994
Accession Number
ADA276465

Entities

People

  • S.-f. Ren
  • Yia-Chung Chang
  • Z-q. Gu

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Brillouin Zones
  • Crystal Growth
  • Crystals
  • Electronics Laboratories
  • Energy Bands
  • Materials
  • Military Research
  • Optical Properties
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductors
  • Spin-Orbit Interaction
  • Technical Information Centers
  • Valence Bands
  • Work Functions

Readers

  • Quantum Chemistry
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics