RF Vacuum Microelectronics
Abstract
We summarize our progress towards developing a thin film edge emitter vacuum transistor capable of 1 GHz modulation. The second fabrication run of vacuum transistors was carried out and is approximately 90% complete. Fabrication is anticipated to be completed in early January 1994. Vacuum microelectronics, Edge emitter, Thin film technology, High frequency devices, Triodes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 15, 1994
- Accession Number
- ADA276512
Entities
People
- D. K. Arch
Organizations
- Honeywell International, Inc.