Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy
Abstract
During this funding period the work focused on understanding the origin of defects in GaN grown by the ECR-MBE method and studied their role transport, optical and recombination properties. More specifically from EPR studies we deduced the effective mass of the zincblende structure of GaN to be m* =0.15 m(sub o). Photoluminescence studies indicate that the concentration of defect states at 2.2eV is higher on films grown at higher microwave power. The role of hydrogen in the de-activation of p-type doping was investigated by introducing hydrogen in Mg-doped films after their growth. The doping activity is restored upon annealing the hydrogen. TEM studies of GaN film grown on Silicon was completed and reveal that the majority of defects are stacking faults, microtwins and localized regions having the wurtzite structure. In the device area we investigate the RIE of GaN in various reactive gases. Gallium nitride, Molecular beam epitaxy, Electron cyclotron resonance, Defects, Hydrogen, TEM, EPR, RIE.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1993
- Accession Number
- ADA276754
Entities
People
- Theodore D. Moustakas
Organizations
- Boston University