Research on High Reliability Refractory Ohmic Contacts for GaAs FETs and MODFETs

Abstract

This report consists of reprint articles covering the following subjects: High Temperature Characteristics of Amorphous TiWSi(x) nonalloyed ohmic contacts to GaAs; All Refractory GaAs FET Using Amorphous TiWSi(x) Source/ Drain Metallization and Graded-In(x)Ga(1-x) As Layers; High Selectivity Patterned Substrate Epitaxy of In(x)Ga(x-1)As/GaAs(< or = X < or = 1) by Conventional LPOMVPE; Effect of Electrochemical Treatments on the Photoluminescense from porous Silicon; A Simplified Model Describing Enhanced Growth Rates During Vapor Phase Selective Epitaxy; All Refractory GaAs FET for High Temperature Applications.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1994
Accession Number
ADA276848

Entities

People

  • W. T. Anderson

Organizations

  • University of Virginia

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystals
  • Electrical Engineering
  • Electronics Laboratories
  • Electrons
  • Epitaxial Growth
  • Fabrication
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Materials
  • Materials Science
  • Power Electronics
  • Semiconductors
  • Transistors
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Nanofabrication and Microfabrication.
  • Surface Engineering/Surface Coating Technology.