New Zinc-bis(dialkylamides) Potentially Usable as Site-Selective Dopants for p-Type ZnSe

Abstract

In earlier work, the effective utilization of Zn(NSi(CH3)32)2 as a site-selective dopant for the production of p-type ZnSe by OMVPE was demonstrated. Several new zinc-bis(dialkylamides) of the general form (R)(R') nznN(R )(R ') now have been prepared. They have been characterized by 1H- and 13C-NMR, GC/MS and elemental analysis. Vapor pressures and gas phase decomposition profiles have been examined. Correlations of vapor pressure and structure are discussed for this series of compounds. A mechanism for the site- selectivity observed in the incorporation of nitrogen is proposed.

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Document Details

Document Type
Technical Report
Publication Date
Mar 08, 1994
Accession Number
ADA276947

Entities

People

  • Oliver Just
  • William S. Rees Jr.

Organizations

  • Georgia Tech

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Alkali Metals
  • Chemical Compounds
  • Chemistry
  • Compound Semiconductors
  • Decomposition
  • Elimination
  • Epitaxial Growth
  • Films
  • Materials
  • Materials Science
  • Military Research
  • Nitrogen
  • Phase
  • Thin Films
  • Vapor Pressure
  • Volatility
  • Zinc Compounds

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Materials Science and Engineering.
  • Semiconductor Device Technology