IR Materials Producibility
Abstract
In this quarter we have completed an extensive paper on native point defects in Hg0.8Cd0.2Te, and submitted it to Physical Review B. We calculated the binding energy of a mercury vacancy tellurium anti-site defect complex in Hg0.8CdTe and estimated the complex density and its consequences on materials processing. The defect formation energies in CdTe and ZnSe, including gradient corrections to the local density approximation, were calculated, and estimates of the neutral defect concentrations in ZnSe were made. We have continued to develop a method to calculate the defect ionization energies in CdTe, ZnSe, and LiNbO3. Preliminary prediction of the defect densities in x=0.17 LWIR Hgl-xZnxTe were made and compared to results in HgCdTe. We continued to develop a method to calculate the temperature dependence of the semiconductor bandgaps. Modifications of our thermodynamical codes for the LiNbO3 problem were made so that the stoichiometry and temperature may be specified and the defect densities determined. Native point defect, Defect density, Photonic material, IRFPA, HgTe, CdTe, ZnSe, HgCdTe, LiNbO3.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1994
- Accession Number
- ADA277028
Entities
People
- A. Sher
- A. T. Paxton
- M. A. Berding
- M. W. Muller
Organizations
- SRI International