Electron Cyclotron Resonance Plasma Oxidation Studies of InP
Abstract
Electron cyclotron resonance plasma oxidation of InP was studied using both spectroscopic and single wavelength ellipsometry employed during the oxidation process. A two layer oxide was observed with the outer layer being In rich and the inner layer P rich as-confirmed from x-ray photoelectron spectroscopy and etch rate studies. Optical models and oxidation kinetics are analyzed. From positive substrate bias effects on oxidation rates, negative ion oxidant species were identified as dominant and oxide etching was observed at negative bias. Electron, Cyclotron, InP, Ellipsometry.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 15, 1994
- Accession Number
- ADA277431
Entities
People
- Eugene A. Irene
- J. Joseph
- Y. Z. Hu
Organizations
- University of North Carolina at Chapel Hill