Investigation of Dose Rate Dependent Electrical Activation of Implanted Dopants in Gallium Arsenide

Abstract

In references 1 and 2 the principal investigator and his collaborators have documented that a surprisingly large improvement in the electrical properties of silicon and sulfur implanted GaAs are realized if the implantations are carried out at low dose-rates. This work is the subject of a Navy Patent application (case 72,812). It seems likely that these phenomena are related to a dose-rate dependent damage accumulation mechanism in GaAs that has recently been reported on by a group at Oak Ridge National Laboratories. While the dose-rate effects can now be expected there is no understanding as to exactly why they occur nor can they be accurately predicted. This study seeks to shed light on these issues by performing spectroscopic measurements on silicon implanted GaAs samples and correlating these results with the implantation parameters and electrical properties of the samples.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1992
Accession Number
ADA277511

Entities

People

  • Frederick G. Moore

Organizations

  • Whitman College

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Algorithms
  • Band Gaps
  • Carrier Mobility
  • Conduction Bands
  • Dose Rate
  • Electrical Measurement
  • Electrical Properties
  • Emission
  • Energy Bands
  • Gallium Arsenides
  • Intensity
  • Luminescence
  • Materials
  • Measurement
  • Mobility
  • Optical Properties
  • Transitions

Fields of Study

  • Materials science

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics