Quarterly Technical Report, Agreement Number N00014-92-J-1308 (Lehigh University)
Abstract
Preliminary kinetics studies of SiGe oxide growth were conducted on spare samples with and without boron doping. Reasonable oxides were grown for 100 ppm additions of NF3 to the dry O2 ambient, as measured by ellipsometry. The doctoral student on this project picked his doctoral committee, which includes Dr. Phillip E. Thompson from the Naval Research Laboratory. His proposal, entitled 'The Low Temperature Oxidation Behavior of SiGe Thin Films in a Fluorinated Ambient' has been approved. Dr. Thompson has provide an initial set of Si-Ge-covered wafers with 2,5,10 and 20 percent Ge, prepared by MBE. Additional samples have been ordered from AT and T Bell Laboratories. Our work on this contract has been concerned with the use of implanted germanium to reduce hot electron injection from silicon into SiO2 in MOSFET Devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1992
- Accession Number
- ADA277536
Entities
People
- D. R. Young
- R. J. Jaccodine
- T. C. Lin
Organizations
- Lehigh University