Large-Diameter InGaAs/AlGaAs Vertical-Cavity Surface-Emitting Lasers with Low Threshold Current Density Fabricated Using a Simple Chemical Etch Process

Abstract

We have demonstrated threshold current densities below 800 A/sq cm in large-diameter (75 micrometers < d< 150 micrometers vertical-cavity surface- emitting lasers fabricated from an epitaxial structure containing a single In(0. 2)Ga(0.8)As quantum well in a one-wavelength-long Fabry-Perot resonant cavity. The fabrication process uses a circular Au/Cr/Au disk as both the p-type contact and the mask for chemically etching individual diodes.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1994
Accession Number
ADA277733

Entities

People

  • George J. Simonis
  • John L. Bradshaw
  • John T. Pham
  • Richard P. Leavitt

Organizations

  • United States Army Research Laboratory

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Chemical Etching
  • Computer Simulations
  • Current Density
  • Detectors
  • Diameters
  • Electron Microscopes
  • Electronics Laboratories
  • Etching
  • Fabrication
  • Lasers
  • Optical Properties
  • Quantum Wells
  • Reflectance
  • Scanning Electron Microscopes
  • Semiconductors
  • Surface Emitting Lasers

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Nanofabrication and Microfabrication.
  • Optical Physics and Photonics.

Technology Areas

  • Directed Energy
  • Quantum Computing