A Gallium Arsenide MESFET Operational Amplifier for Use in Composite Operational Amplifiers

Abstract

A gallium arsenide (GaAs) MESFET operational amplifier for use in composite operational amplifier (CNOA) configurations is described. This device is guaranteed to be suitable for construction in CNOA models. The GaAs op amp design is a general-purpose device that exhibits a low-frequency gain of approximately-32dB and an open-loop unity gain frequency of 1.3GHz. The input offset voltage of the op amp is 2OmV. These parameters are essential for optimum composite operational amplifier performance. Development and simulation of the GaAs op amp is presented.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1993
Accession Number
ADA277843

Entities

People

  • Benjamin L. Hudson

Organizations

  • Naval Postgraduate School

Tags

DTIC Thesaurus Topics

  • Circuit Analysis
  • Circuits
  • Electrical Engineering
  • Electron Tubes
  • Electronics Industry
  • Electronics Laboratories
  • Engineering
  • Equivalent Circuits
  • Field Effect Transistors
  • Integrated Circuits
  • Metal-Semiconductor Junctions
  • Physical Properties
  • Power Electronics
  • Schottky Diodes
  • Semiconductor Devices
  • Semiconductors
  • Signal Processing

Fields of Study

  • Physics

Readers

  • Control Systems Engineering.
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics