Growth, Characterization and Device Development in Monocrystalline Diamond Films
Abstract
Micro- and macro-photoluminescence techniques were employed in this research to investigate the role of nitrogen-doping on the optical spectra of chemical vapor deposited diamond films and to determine whether the origin of the broadband luminescence is due to vibronic interaction of the nitrogen centers. The temperature behavior of the broadband PL and of the 1.681 eV silicon related optical center were analyzed. The intensity of the broadband was found to exhibit a temperature dependence characteristic of optical emission from a continuous distribution of gap states while the temperature dependence of the 1.681 eV band followed the Boltzmann quenching process. Bias-enhanced diamond nucleation on yttrium aluminum garnet (100) was performed in a microwave plasma chemical vapor deposition reactor. The initial results suggest that this nucleation pretreatment technique enhanced diamond nucleation on this substrate. It is proposed that both the yttrium and aluminum are operative on diamond nucleation. The carbide forming nature of these elements is speculated to be an important attribute of these substrates.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1994
- Accession Number
- ADA277863
Entities
People
- B. R. Stoner
- J. T. Glass
- L. Bergman
- M. T. Mcclure
- O. B. Mohn
- Robert F Davis
- Robert J. Nemanich
- S. D. Wolter
Organizations
- North Carolina State University