Temperature Dependence of Single-Event Burnout in N-Channel Power MOSFET's

Abstract

The temperature dependence of single-event burnout (SEB) in n-channel power metal-oxide-semiconductor field effect transistors (MOSFETs) is investigated experimentally and analytically. Experimental data are presented which indicate that the SEB susceptibility of the power MOSFET decreases with increasing temperature. A previously reported analytical model that describes the SEB mechanism is updated to include temperature variations. This model is shown to agree with the experimental trends. SEU, DMOS, HEXFET, Single-Event- Burnout (SEB), N-Channel MOSFET, Temperature dependence.

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Document Details

Document Type
Technical Report
Publication Date
Mar 15, 1994
Accession Number
ADA277921

Entities

People

  • G. H. Johnson
  • K. F. Galloway
  • R. D. Schrimpf
  • Rokutano Koga

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Bipolar Junction Transistors
  • Chemical Reactions
  • Chemistry
  • Compound Semiconductors
  • Current Density
  • Detection
  • Detectors
  • Experimental Data
  • Field Effect Transistors
  • Mechanics
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Semiconductors
  • Space Systems
  • Transistors

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics