An Extended Approach to Oxidations and Nitridations of Si and GexSi1-x Materials
Abstract
The effect of germanium on the hot electron current of metal-oxide- semiconductor devices has been studied by avalanche electron injection from the silicon to silicon dioxide. Different doses of germanium ranging from 10(exp 12) to 10(exp 15) atoms/sq cm are implanted into Si-SiO2 interface. The 'lucky' hot electron population is suppressed by germanium implantation. We have used the charge-voltage technique to measure the interface state density. The interface state density increase caused by Ge implantation is negligible if the dose is lower than 10(exp 14) Ge/sq cm. We have also used different implantation energies to locate the Ge peak at different locations in the Si. We found that when the peak is at Si-SiO2 interface, the hot electron population is the lowest. Our results show that Ge implantation is a promising method to solve the hot carrier problem that has become important in submicrometer devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1994
- Accession Number
- ADA278047
Entities
People
- Donald R Young .
- Ralph J. Jaccodine
Organizations
- Lehigh University