Electrical Characteristics of GaAs MESFET Fabrication by Ion Implantation of Si or Se

Abstract

Since its synthesis in the 1920s by Goldschmidt, Gallium Arsenide has received much attention in the last few decades. In the mid-1980s, GaAs technology finally matured into the age of production. We saw a boom of companies dedicated to the growth of GaAs materials and the fabrication of GaAs devices and integrated circuits. Although GaAs is no longer being considered a general purpose material like silicon, it is now well established in several niche markets, such as Direct Broadcast Satellite, Microwave Monolithic Integrated Circuits and Optoelectronics.

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Document Details

Document Type
Technical Report
Publication Date
Oct 04, 1993
Accession Number
ADA278416

Entities

People

  • T. W. Sigmon

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Reactions
  • Crystals
  • Electrical Properties
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Fabrication
  • Fermi Levels
  • Field Effect Transistors
  • Integrated Circuits
  • Ion Implantation
  • Optical Properties
  • P-N Junctions
  • Point Defects
  • Semiconductor Devices
  • Semiconductors
  • Two Dimensional

Readers

  • Economics
  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics
  • Space