Critical Review and Technology Assessments, '91-'92
Abstract
The increased complexity and speed requirements of computers, communications, military and aerospace systems has increased the need for devices with performance levels that cannot be attained or we difficult to achieve with silicon designs. This has cause component vendors to seek other materials such as Gallium Arsenide (GaAs) for device construction. GaAs is a compound semiconductor material which exhibits superior carrier mobility, radiation hardness and power efficiency in high frequency application up to 1 00 GHz. The Department of Deforms (DoD) has provided research funds toward the development of GaAs technology since the benefits of faster components and the inherent radiation hardness of GaAs is appealing to military applications. This technology review covers design and application issues for GaAs devices including Monolithic Microwave Integrated Circuit (MMICs), field effect transistors, millimeter wave diodes, and photonic components. Highlighted is a review of models which have bee proposed to predict the reliability of gallium arsenide components. Gallium Arsenide(GaAs), Monolithic Microwave Integrated Circuits(MMIC), Reliability, Reliability prediction, Product evaluation, QML
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1991
- Accession Number
- ADA278419