Industrial Exploitation of a Alternate Technology for the Production of HgCdTe Epilayers, Structures and Devices

Abstract

The program goals was: Estimate the total cost to produce an MBE- grown HgCdTe epitaxial wafer suitable for the industrial manufacture of an IR photo diode detector array. Establish manufacturing procedure for MBE-grown HgCdTe epitaxial layers in order to bring to the market a product which is suitable for FPAs. Growth of high quality HgCdTe single epilayers and heterostructures with extremely uniform physical properties. The following characteristics, according to the program goals, were expected to be reached at the end of this program.

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Document Details

Document Type
Technical Report
Publication Date
Feb 14, 1994
Accession Number
ADA279202

Entities

People

  • Jean-pierre Faurie

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Detectors
  • Electrical Properties
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Energy Levels
  • Experimental Data
  • Heterojunctions
  • Infrared Detectors
  • Low Temperature
  • Manufacturing
  • Materials
  • Measurement
  • Physical Properties
  • Plastic Explosives
  • Standards

Fields of Study

  • Materials science

Readers

  • Image Processing and Computer Vision.
  • Software Engineering
  • Thin Film Deposition Science.