Sub-Millimeterwave Semiconductor Signal Sources

Abstract

Research on Indium Phosphide Pseudomorphic High Electron Mobility Transistors (InP PHEMTs) resulted in 155 GHz and 215 GHz monolithic integrated circuit oscillators. These circuits represent the highest frequencies achieved to date for a fundamental signal source using a three terminal device. Advances in epitaxial growth of the pseudomorphic semiconductor structures and the achievement of low-resistance, 50-nm-long self-aligned gates resulted in the highest short circuit current gain cutoff frequency (ft) transistors ever reported. The planar quasi-optical slot oscillators verify the high frequency capabilities of the InP PHEMT. Hughes Laboratories performed the research on materials, device design and processing device characterization and modeling. The University of Michigan designed the oscillator circuits, including the integrated planar antennas, and measured the .oscillator performance. Submillimeterwave, Monolithic integrated circuit, High electron mobility transistor, Oscillator, Indium phosphide

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1994
Accession Number
ADA279375

Entities

People

  • S. E. Rosenbaum

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Detectors
  • Diagrams
  • Electron Mobility
  • Electronics Laboratories
  • Electrons
  • Epitaxial Growth
  • Frequency
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Materials
  • Measurement
  • Oscillators
  • Semiconductors
  • Short Circuits
  • Transistors
  • Transmission Lines

Fields of Study

  • Materials science

Readers

  • Microwave Engineering.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics