Transient Photoluminescence Measurements on GaAs and AlGaAs Double Heterostructures

Abstract

We report a set of transient photoluminescence (TPL) measurements of GaAs and AlGaAs double heterostructure (DH) materials as a function of temperature from 10K to 300K. We also report measurements of the time-integrated photoluminescence spectra of these samples. We observe, in both the spectra and the TPL measurements, evidence that the low-temperature photoluminescence kinetics are affected by additional paths for radiative decay that are not evident at room temperature, but have implications for material qualities measured at room temperature. Transient photoluminescence, GaAs, AlGaAs, Solar cells.

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Document Details

Document Type
Technical Report
Publication Date
Aug 15, 1993
Accession Number
ADA279408

Entities

People

  • Dean C. Marvin
  • Linda F. Halle
  • Steven C. Moss

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Space
  • Weapons Technologies

DTIC Thesaurus Topics

  • Cells
  • Electronics
  • Energy Bands
  • Heterojunctions
  • Kinetics
  • Low Temperature
  • Luminescence
  • Materials
  • Measurement
  • Photoluminescence
  • Physics
  • Security
  • Semiconductor Devices
  • Semiconductors
  • Solar Cells
  • Spectra
  • Standards

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.