Aerosol-Assisted Chemical Vapor Deposition of Copper: A Liquid Delivery Approach to Metal Thin Films

Abstract

Aerosol-Assisted Chemical Vapor Deposition (AACVD) has been used to attain high deposition rates (1000 A/min, up to 800 A/min at 140 deg C) of Cu films at low temperatures (120-200 deg C) from toluene solutions of (hfac)Cu(1, 5-COD) in a warm-wall reactor. The films are crystalline and exhibit resistivities close to bulk (1.7-3.5 micro omega cm). Activation energies calculated from the deposition rate as a function of the preheating temperature and the substrate temperature (varying also the nozzle-substrate distance) were 6.8, 8.9 (0.7 cm) and 9.1 (1.7 cm) kcal/mol, respectively

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Document Details

Document Type
Technical Report
Publication Date
May 06, 1994
Accession Number
ADA279702

Entities

People

  • C. Roger
  • Mark J. Hampden-smith
  • T. T. Kodas
  • Thomas S. Corbitt

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Abstracts
  • Aerosol Generators
  • Chemical Engineering
  • Chemical Vapor Deposition
  • Chemistry
  • Electron Microscopy
  • Energy
  • Films
  • Heat Of Activation
  • Heat Of Vaporization
  • Low Temperature
  • New Mexico
  • Partial Pressure
  • Substrates
  • Thin Films
  • Vapor Deposition
  • Vapor Pressure

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Thermal Physics or Thermal Science.
  • Thin Film Deposition Science.