An Atomically-Resolved STM Study of the Interaction of Phosphine (PH3) with the Silicon (001) Surface

Abstract

The interaction of phosphine (PH3) with the Si(001) surface has been investigated with scanning tunneling microscopy. At 300 K, PH3 adsorbs molecularly on top of a single Si=Si dimer with the phosphorus atom in a pentacoordinate configuration. Phosphine adsorption is accompanied by occasional ejection of silicon atoms from the substrate onto the surface, creating surface vacancies and Si adatoms. Si atoms are preferentially ejected from defect sites. At high coverage, adsorbed PH3 molecules order into small regions of c(4x2) symmetry and the ejected silicon nucleates into small dimer strings. The long- range order of the molecular PH 3 is disrupted by domain boundaries and the ejected silicon. Annealing PH 3- saturated surfaces produces further ejection of silicon onto the surface, resulting in large silicon islands covering approximately 20% of the surface.

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Document Details

Document Type
Technical Report
Publication Date
May 27, 1994
Accession Number
ADA279819

Entities

People

  • J. Bronikowski
  • R. J. Hamers
  • Yaonan Wang

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Annealing
  • Availability
  • Boundaries
  • Chemical Compounds
  • Chemistry
  • Classification
  • Coverings
  • Ejection
  • Governments
  • Military Research
  • Organophosphorus Compounds
  • Phosphine
  • Physical Chemistry
  • Security
  • Universities

Fields of Study

  • Physics

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Thin Film Deposition Science.