International Symposium on Advanced Laser Technologies Held in Prague, Czech Republic on November 8-13, 1993

Abstract

Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin films, depending on the energy density of the annealing laser.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Nov 13, 1993
Accession Number
ADA279849

Entities

People

  • A. Barborica
  • A. M. Bonch-bruevich
  • A. P. Alekhin
  • A. S. Lagutchev
  • G. N. Mikhailova
  • J. Boneberg
  • Jiri Dunovsky
  • P. A. Atanasov
  • V. V. Maksimov
  • Valerii Aksenov

Organizations

  • Czech Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Critical Temperature
  • Crystal Structure
  • Dielectrics
  • Energy Transfer
  • Heat Energy
  • Laser Beams
  • Lasers
  • Light (Electromagnetic Radiation)
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Optical Properties
  • Optics
  • Phase Transformations
  • Quantum Yields
  • Semiconductors
  • Transition Temperature

Fields of Study

  • Physics

Readers

  • Academic Conference Management
  • Optical Physics and Photonics.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition