Physics and Applications of Defects in Advanced Semiconductors. Materials Research Society Symposium Proceedings. Volume 325
Abstract
Defect characterization, identifications, and their influence on material properties and device performance are a major subject in the physics and applications of semiconductors. This volume focuses on defects in advanced semiconductors or precisely quantum wells, superlattices, and heterostructures. In Part I of this proceedings the invited and contributed papers deal with defects in type I and type II superlattices based on III-V semiconductors such as GaAs/AlGaAs multiple quantum wells (MQWs). Some of the topics include optical spectroscopy of defects in GaAs/AlGaAs MQWs, defects injections and diffusions in heterostructures and impurity effects on the electronic states in quantum wires and quantum dots. Part II deals with defects and impurities in bulk and epitaxial InP and related compounds, for example, the semi-insulating behavior of undoped InP is discussed. Recently, SiGe/Si quantum wells and heterostructures have been the subject of an increasing interest due to their applications in electronic and opto-electric devices. Defects, dislocation distributions, and doping in these heterostructures are discussed in Part III.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1994
- Accession Number
- ADA280059
Entities
People
- John Ballance
Organizations
- Materials Research Society