IR Materials Producibility

Abstract

The formation energy for mercury vacancy - tellurium antisite pairs is calculated. We developed a method for calculating the ionization energies of the defects in semiconductors. The electron-phonon interaction-induced band-edge shifts in semiconductors are calculated using accurate band structures. The temperature variation of gaps in GaAs (done to validate our method) and Hg(0.78) Cd(0.22)Te have been calculated and are found to agree well with experiments. Native point defect, Defect density, Photonic material, IRFPA, HgTe, CdTe, ZnSe, HCdTe, LiNbO3.

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Document Details

Document Type
Technical Report
Publication Date
Jun 03, 1994
Accession Number
ADA280094

Entities

People

  • A. Sher
  • A. T. Paxton
  • M. A. Berding
  • M. W. Muller

Organizations

  • SRI International

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Detectors
  • Electronics
  • Electronics Laboratories
  • Energy Bands
  • Energy Gaps
  • Focal Plane Arrays
  • Focal Planes
  • Long-Wavelength Infrared Radiation
  • Optical Materials
  • Point Defects
  • Semiconductors
  • Tellurium
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics