InT1Sb for Long-Wavelength Infrared Photodetectors and Arrays

Abstract

A number of samples have been grown in the Intervac-EPI solid-source Molecular Beam Epitaxy (MBE) system since it was first commissioned in early May, 1994. The samples have consisted of both undoped and doped InSb, undoped InAs and various calibration layers such as n-type and p-type GaAs doping staircases. The different surface reconstructions and surfaces phase transitions have been investigated using Reflection High Energy Electron Diffraction (RHEED) . For example, InSb growth temperature is set relative to a c(4x4) to a(1x3) surface phase transition, corresponding to an actual surface temperature of 390 deg C. RHEED oscillations were observed for GaAs, InAs and InSb as this is particularly important for determining growth rates and III/V flux radio. The philosophy has been to determine system independent growth parameters so that the technology can be easily transferred to other growth systems.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1994
Accession Number
ADA280108

Entities

People

  • Manijeh Razeghi

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Calibration
  • Electron Diffraction
  • Elements
  • Energy
  • Engineering
  • Heat Of Activation
  • Materials
  • Measurement
  • Molecular Beams
  • Optical Properties
  • Phase Diagrams
  • Phase Transformations
  • Surface Temperature
  • Transition Temperature
  • Transitions
  • Vapor Pressure
  • X Rays

Fields of Study

  • Materials science

Readers

  • Aerospace Test and Evaluation
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene