InT1Sb for Long-Wavelength Infrared Photodetectors and Arrays

Abstract

The heteorepitaxial narrow-gap semiconductors on Si or Ga As substrates offer the possibility of monolithic integration of detectors and readout circuits in the infrared focal plane arrays (IRFPAs). This structure can avoid the problems of a complicated etch-thinning process and indium bump displace in the hybrid case. This structure permits the production of a large- area FPAs with high reliability and low cost. The purpose of this project is to develop III-V IRFPA on InSb, GaAs, Si substrates, specially detectors made from In(1-x)Tl(x)Sb material system. The devices are of potential in the long wavelength (8-14 micrometers), particularly in the application of thermal imaging, as MCT materials suffer from poor composition uniform over large areas and thermal stability. As a preliminary step towards INTlSb photovoltaic detectors, it is necessary to establish a reliable procedure to fabricate InSb photovoltaic detectors.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1993
Accession Number
ADA280109

Entities

People

  • Manijeh Razeghi

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Arrays
  • Chemical Etching
  • Detectors
  • Electrical Engineering
  • Etching
  • Fabrication
  • Focal Plane Arrays
  • Focal Planes
  • High Reliability
  • Infrared Spectrometers
  • Long Wavelengths
  • Low Temperature
  • Materials
  • Measurement
  • Narrow Band Gap Semiconductors
  • Photographs
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Image Processing and Computer Vision.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics