InTISb for Long-Wavelength Infrared Photodetectors and Arrays.

Abstract

The objective of this research program is to grow InTlSb alloys for long-wavelength infrared detectors by low-pressure metalorganic chemical vapor deposition and to investigate their physical properties. As the start towards this goal, optimum growth conditions for high quality InSb epitaxial films on InSb, GaAs, and Si have been determined. InSb films grown under these conditions exhibited one of the best structural and electrical properties reported so far. Growth of InTlSb was then carried out using cyclopentadienylthallium as the source for thallium. This has led to the first successful growth of InTlSb having an extended infrared response. By changing the thallium flow, thallium content was varied and the resulting absorption edge varied from 5.5 micrometers to 9.0 micrometers. For conditions yielding a 9.0 micrometer absorption edge, a thick sample was grown which resulted in a photoconductor having a specific detectivity of D(*) = 10(exp 9) cmHz sup 1/2/2 at 77K and 7 micrometers. These results demonstrate InTlSb as feasible material system for infrared detection.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1994
Accession Number
ADA280207

Entities

People

  • Manijeh Razeghi

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Arrays
  • Chemical Vapor Deposition
  • Detection
  • Detectors
  • Electrical Engineering
  • Electrical Properties
  • Flow Rate
  • Focal Plane Arrays
  • Focal Planes
  • Infrared Detectors
  • Long Wavelengths
  • Materials
  • Measurement
  • Optical Properties
  • Physical Properties
  • Temperature Gradients
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology