Field Emitter Array RF Amplifier Development Project Phase One, Cathode Technology Development
Abstract
Key ideas include: (1) Develop microstructural field emission diodes with a cutoff frequency above 1 GHz, 5A/sq. cm at 200 V G-E bias, and >100 hr lifetime; (2) Reduce capacitance and increase transconductance of FEA devices to improve frequency response; (3) Evaluate various anode configurations including vacuum microencapsulation to permit testing of larger numbers of sample FEA devices; and (4) Model and characterize our versions of the FEA device. Major accomplishments includes: (1) Gated field emitter-on-a-column structures with low capacitance have been successfully fabricated; (2) Two isotropic silicon emitter etches have been successfully explored; (3) Early versions of field emission triodes which have been vacuum micro-encapsulated have been built successfully; (4) A microstrip packaging design methodology has been designed to null capacitance in FEAs for narrow band, high frequency applications; and (5) Testing of silicon tips with various surface treatments has produced one possible low voltage (approx. 10V)/high transconductance (>100 microS) FE diode design.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1992
- Accession Number
- ADA280335
Entities
People
- Ching-tzong Sune
- Gary W. Jones