Field Emitter Array RF Amplifier Development Project. Cathode Technology Development. Phase 1
Abstract
This document presents the results of Phase I of the Field Emitter Array RF Amplifier Development Project. The primary goal of the Phase I performance period was the development of field emission cathodes with the following characteristics: 5 mA total emission current, 5 A/sq cm current density, operation at an applied voltage of less than 250 V, greater than 1 hour lifetime, and emission current modulation at 1 GHz or greater. The basic fabrication process for silicon field emitter arrays was defined during the first 18 months of the contract performance period. During the final 12 months of the contract, the process was refined using statistical process control, with the goal of maximizing electrical yield on large arrays. The resulting devices met each of the program performance criteria. Arrays of up to 232,630 emitters, the largest field emitter arrays in any material to date, were successfully fabricated and electrically tested. The emission currents measured from these devices were the highest reported in the literature for silicon field emitter arrays. Techniques for further enhancing performance through the deposition of low work function and metal coatings were developed. Recommended directions for further research were defined for implementation under ARPA leadership. Field emission, Cold cathode, RF Amplifier
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1994
- Accession Number
- ADA280515
Entities
People
- Gary E. Mcguire
- W. D. Palmer