Gas-Phase and Surface Chemistry in Electronic Materials Processing. Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on November 29-December 2, 1993. Volume 334
Abstract
The papers are organized in six sections. Part I contains papers on silicon and carbon systems. In addition to papers discussing silicon and silicon oxide deposition it includes several papers on diamond film growth. The chemistry underlying the growth and doping of III-V and II-VI compound semiconductors is covered in Part II together with several studies discussing new precursors. Part III contains papers on metallization. The deposition of dielectric and transitional layers is the topic of Part IV. Par V contains papers on etching of thin films. Finally, Part VI covers special topics, such as deposition on patterned substrates, reactor design, heteroepitaxy and selective epitaxy
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1994
- Accession Number
- ADA280586
Entities
People
- F. T. Smith
- G. R. Paz-pujalt
- P. R. Westmoreland
- T. J. Mountziaris
Organizations
- Materials Research Society