Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and their Characterization
Abstract
The viability of Si2Cl6, C2H2 and C2H4 as precursors for chemically self-limiting ALE of SiC has been investigated via XPS and LEED. Si2Cl6 readily adsorbs in a self-limiting manner on a Si(100) surface; however, neither hydrocarbon will adsorb or react with a Cl-terminated Si surface to 475 deg C. Conversely, partial chlorination of Si(100) saturated with C2H2 and C2H4 does occur and implies that Si2Cl6 will adsorb/react with a hydrocarbon terminated surface. Layer-by-layer growth of Beta-SiC on Si(100) or 6H-SiC has been achieved with a carrier concentration of approx. 10(exp 17)/cu cm. P-type doping with Al has allowed the achievement of hole concentrations of 4 x 10(exp 18) - 2 10(exp 20)/cu cm. Efforts to produce an HBT using Beta-SiC emitters is described. Ni3Si has been employed for the deposition of diamond because of the close lattice match. Under the same growth conditions, diamond particles were obtained on the Ni3Si, but only diamond-like C and graphite on pure Ni substrates. Evidence of oriented particles was observed. REED and TEM of cerium oxide films grown on Si(111) substrates has revealed the formation of a dual amorphous layer of CeOx and SiO2 at the Si interface followed by a layer of CeO2. Post annealing in dry oxygen caused the CeOx layer to disappear and the SiO2 layer to thicken. D sub it = 6 x 10(exp 11)/sq cm and Q sub f = 5 x 10(exp 11)/sq cm. The structure exhibits a high capacitance due to the large dielectric constant of CeO2 and has electrical properties comparable with those of other reported gate insulators on Si.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1994
- Accession Number
- ADA280987
Entities
People
- Robert F Davis
Organizations
- North Carolina State University