Low Voltage Electron Beam Lithography

Abstract

The contract has three parts covering aspects of high precision electron beam lithography. (1) Comprehensive computer modeling of the electron beam tool. (2) Experimental determination of the properties of sources, columns, and targets, and (3) The use of silicon single crystals as straightness and orthogonality standards using orientation dependent etching techniques.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1994
Accession Number
ADA281046

Entities

People

  • R. Browning
  • Roger Fabian W. Pease

Organizations

  • Stanford University

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Backscattering
  • Elastic Scattering
  • Electron Beam Lithography
  • Electron Beams
  • Electron Energy
  • Electron Microscopes
  • Electron Scattering
  • Electrons
  • Energy
  • High Energy
  • Integrated Systems
  • Lithography
  • Low Voltage
  • Scanning Electron Microscopes
  • Scattering
  • Scattering Cross Sections
  • Single Crystals

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Nanofabrication and Microfabrication.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene