Numerical Studies of Low Temperature Gallium Arsenide Buffer Layers and Their Influence on Device Operation
Abstract
Through the use of numerical methods involving both the drift and diffusion equations including traps, and more recently the quantum Liouville equation, Scientific Research Associates, Inc., (SRA) has been examining the physics and operation of LTG materials and devices. Both defect and Schottky models have been studied, and two-dimensional microscopic and macroscopic device simulations have been performed. A new generalization of the drift and diffusion equations, including current, has been implemented for the specific purpose of treating embedded metallic precipitates. This document summarizes SRA work under U.S. Air Force, Office of Scientific Research, Contract F49620-91-C-0023. Gallium arsenide, Low temperature, Precipitates, Defects, Traps, Buried schottky barriers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 17, 1994
- Accession Number
- ADA281156
Entities
People
- Harold L. Grubin
- John P. Kreskovsky