Pseudomorphic Semiconducting Heterostructures from Combinations of AlN, GaN and Selected SiC Polytypes: Theoretical Advancement and its Coordination with Experimental Studies of Nucleation, Growth, Characterization and Device Development
Abstract
AlN films with essentially atomically flat surfaces, indicative of two-dimensional growth have been deposited on on-axis 6H-SiC(0001) surfaces at 1050 deg C via plasma-assisted gas source MBE. Island features, the coalescence of which caused defects and influenced film quality, were observed on the vicinal surface. SiC/AlN pseudomorphic multilayers with abrupt interfaces and AlN(x)SiC(1-x) solid solutions have been deposited using a similar technique and substrate. The use of on-axis substrates resulted in superior structures. High AIN solid solutions have been achieved; however, they were polycrystalline. Chemical interdiffusion between 6-H SiC wafers and deposited single crystal AIN thick films between 1800 and 1950 deg C was not observed via parallel electron energy loss microscopy and Auger depth profiles to within 15A of the interface. Pseudomorphic GaN/AlGaN double heterostructures with abrupt interfaces have also been produced using GSMBE. The purpose is for UV light emitting diodes. A supersonic jet deposition system has been designed and commissioned for the growth of III-V nitride films. Silicon carbide, Aluminum nitride, Gallium nitride, Two dimensional growth, Pseudomorphic heterostructures, Molecular beam epitaxy, Chemical interdiffusion, Light emitting diodes, Supersonic jet
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1994
- Accession Number
- ADA281218
Entities
People
- K. Linthicum
- Robert F Davis
- S. Kern
- S. Roberson
- Shuta Tanaka
- V. Torres
Organizations
- North Carolina State University