Quantum Transport in Semiconductor Devices
Abstract
This program concentrated on research investigating quantum effects in which these important in ultra-small semiconductor devices, and the manner in which these effects may limit downscaling of individual feature sizes. The major concentrations of the program were on: Tunneling-in gated semiconductor structures, an effect which has been found to be important in normal high- electron mobility transistors (HEMTs) with gate lengths of <0.025 micrometer. The role played by slab and interface phonon modes in transport within small semiconductor devices. Modeling of quantum effects in MESFET devices as a general tool for approaching the inclusion of such effects in dynamic semiconductor device models. Semiconductor devices, Hydrodynamic equations, Velocity overshoot, MESFETS, Device modeling.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1994
- Accession Number
- ADA281383
Entities
People
- David K. Ferry
Organizations
- Arizona State University