Interface Properties of Wide Bandgap Semiconductor Structures
Abstract
The structure and electronic properties of 1x1 and 2x1 H-terminated and clean C(100)2x1 surfaces have been calculated with ab initio molecular dynamics. A negative electron affinity was found for these surfaces; a positive electron affinity was found for the C(100) surface. In related growth calculations for ALE of diamond, the desorption of the HF molecule was found to be critical for H- and F-based growth mechanisms. Ni3Si and Ni substrates were compared for the deposition of diamond films under the same conditions. Diamond (C) particles were obtained on the Ni3Si, but only diamond-like C and graphite on the latter. C films deposited on via CVD. Field emission showed very high stability as well as high current densities. Step bunching occurred at the outset of the initial stage of SiC growth using C2H4Si2H6 ratios of 1, 2 or 10 and gas source (GS) MBE. Subsequent growth occurred vis island formation (C2H4- rich) or step-flow (1:1 ratio). Beta-SiC or 6H-SiC deposited using high or 1:1 C/Si ratios, respectively.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1994
- Accession Number
- ADA281469
Entities
People
- Jeffrey T Glass
- Jerry Bernholc
- Robert F Davis
- Robert J. Nemanich
- Salah Bedair
Organizations
- North Carolina State University