Monte Carlo Simulation of Mercury Cadmium Telluride

Abstract

Mercury Cadmium Telluride (MCT) has a very large electron mobility and exhibits a non-ohmic behavior in relatively small electric fields. The goal of this project was to reach the understanding of electron transport properties of narrow band gap semiconductors, with emphasis on high-field behavior. Even though the primary material of interest was Mercury Cadmium Telluride (MCT), but we also investigated Indium Antimonide. Researchers derived expressions for scattering rates for electrons in Mercury Cadmium Telluride which accounted for correct wave functions for narrow band gap materials, and performed the Monte- Carlo simulation of Hg(0.205)Cd(0.795)Te at 77K for different doping levels.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1994
Accession Number
ADA281546

Entities

People

  • Michael Shur

Organizations

  • University of Virginia

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Charge Carriers
  • Compound Semiconductors
  • Electric Fields
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Exclusion Principle
  • Indium Antimonides
  • Materials
  • Monte Carlo Method
  • Narrow Band Gap Semiconductors
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics