Picosecond Silicon Metal-Semiconductor-Metal Photodiode
Abstract
The ultrafast characteristics of crystalline-silicon metal- semiconductor-metal (MSM) photodiodes with finger widths and spacings down to 200 nm, subjected to femtosecond optical pulse excitations, was measured with a subpicosecond electro-optic sampling system. Electrical responses with full- width at half-maximum (FWHM) as short as 3.7 ps, at a corresponding 3 dB bandwidth of 110 GHz, were generated by violet-light excitation. These diodes are the fastest silicon photodetectors reported to date. Detailed bias and light-intensity dependence of the diode response has been measured. These results are used to obtain the velocity-field relation of electrons in silicon and to demonstrate the ideal transit-time-limited response of the diodes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 16, 1993
- Accession Number
- ADA281548
Entities
People
- Chia-chi Wang
- Mark Y. Liu
- Sotiris Alexandrou
- Stephen Y. Chou
- Thomas Y. Hsiang
Organizations
- University of Rochester