Synthesis of Tungsten Nitrene Complexes as Precursors for Tungsten Nitride

Abstract

Chemical vapor deposition using organometallic precursors (MOCVD) provides a method for the preparation of thin films. Low valent tungsten nitrene complexes were synthesized as potential precursors to tungsten nitride (WN(x)), a material used in diffusion barriers for Si or GaAs semiconductor devices. The original target precursors for MOCVD of WN(x) were the carbonyl-containing complexes (CO)(5-n)(PR3)(n)W-NR, where R is an alkyl or aryl group. Later synthetic work involved the tungsten (IV) imido (or nitrene) complexes (CO) 2I2LW(triple bonds)NPh, which were prepared by oxidation of the zwitterionic species (CO)5WNPhNPhC(OMe)Ph with one equivalent of I2 followed by addition of a the coordinating species L L=THF, pyridine, PMe3, P(OMe)3.

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Document Details

Document Type
Technical Report
Publication Date
Jun 16, 1994
Accession Number
ADA281592

Entities

People

  • Lisa Mcelwee-white

Organizations

  • Stanford University

Tags

Communities of Interest

  • Human Systems

DTIC Thesaurus Topics

  • Abstracts
  • Chemical Compounds
  • Chemical Engineering
  • Chemical Vapor Deposition
  • Chemistry
  • Crystal Structure
  • Diffusion
  • Films
  • Materials
  • Metals
  • Oxidation
  • Precursors
  • Semiconductor Devices
  • Semiconductors
  • Thin Films
  • Tungsten
  • Vapor Deposition

Fields of Study

  • Chemistry
  • Materials science

Readers

  • Electrochemical Surface Science
  • Polymer Science and Technology
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene