Scanning Tunneling Microscopy of III-V Semiconductors

Abstract

Scanning tunneling microscopy and theory were combined to create novel depressive quantum dots at room temperature on the (110) surfaces of InSb --- dots which merit further exploration as potential nanopixels for tiny-device lithography; develop a strained-layer superlattice model of high-temperature superconductivity; image, understand, and make models of single-atom-high steps on III-V surfaces; invent and exploit a new kind of spectroscopy of surface states of semiconductors, called tipology; develop phenomenological models of variety of surface phenomena.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 06, 1994
Accession Number
ADA281722

Entities

People

  • John D. Dow

Organizations

  • University of Arizona

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Band Gaps
  • Crystal Structure
  • Crystals
  • High Temperature
  • Materials
  • Microscopy
  • Quantum Dots
  • Quantum Tunneling
  • Scanning
  • Scientists
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Spectroscopy
  • Superconductivity
  • Superlattices
  • Tunneling

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing