Modification of II-VI and III-V Materials Using Ion Beams

Abstract

A major part of this program involved characterization of II-VI materials and device structures, primarily HgCdTe. The results of this research benefitted MBE growth of HgCdTe for infrared detector technology. The primary industry beneficiary of these results has been Santa Barbara Research Center (SBRC), but because of a collaborative agreement that began at the end of 1992 with Rockwell, their Science Center may also have benefitted. Both SBRC and Rockwell manufacture IR detector systems for the US government. The III-V work done on this program benefitted Hughes directly, and other industry through other ARO contracts and our joint publications. Also AT&T (Bell Labs/Pearton) and Hughes collaborate on programs like MMIC, in which III-V technology is used substantially.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1994
Accession Number
ADA281839

Entities

People

  • O. K. Wu
  • Roger G. Williams

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Detection
  • Detectors
  • Electrical Properties
  • Elements
  • Infrared Detection
  • Infrared Detectors
  • Ion Beams
  • Ions
  • Mass Spectrometry
  • Materials
  • Quantum Wells
  • Scientists
  • Semiconductors
  • Spectrometry
  • Students

Fields of Study

  • Materials science

Readers

  • Research Science/Academic Research
  • Semiconductor Device Technology
  • Technical Research and Report Writing.