Investigation of a Normal Incidence High-Performance P-Type Strained Layer In(0.3)Ga(0.7)As/In(0.52)Al(0.48)As Quantum Well Infrared Photodetector
Abstract
During this reporting period, we have made excellent progress towards the program goals. A significant achievement was made in the development of a new compressionally strained p-type GaAs/InGaAs QWIP grown on GaAs by MBE. This new QWIP achieved two color detection with detective peaks at 8.9 microns and 8. 4 microns in the LWIR band and 5.5 microns in the MWIR band. This detector is under background limited performance (BLIP) at temperatures up to 70 K. The measured responsivity were found to be 24 mA/W and 45 mA/W for the two LWIR peaks respectively, while a responsivity of 13 mA/W was found for the MWIR peak; all at T=75 K. Additional characterization on the tensile strain InGaAs/InAlAs on InP P-QWIP has been performed and the results are summarized in this report. Currently, we are investigating other possible p-type QWIP structures with different performance parameters. These include a new dual strained InGaAs/ InAlAs p-type QWIP. Additional consideration is being given towards the reliability of p-type contacts and the strained layer material for these QWIP structures P-type strained layer InGaAs/InAlAs Quantum Well Infrared Photodetectors (QWIPs), Intersubband absorption, Dark current, Responsivity, Detectivity
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 15, 1994
- Accession Number
- ADA282720
Entities
People
- Max N. Yoder
Organizations
- University of Florida