Diagnostic Techniques for Semiconductor Materials Processing. Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on November 29-December 2, 1993. Volume 324
Abstract
The symposium focused on various aspects of process diagnostics and device processing. Diagnostic techniques which were considered fell into two classes: invasive and non invasive. Optical characterization techniques were the most widely applied characterization tools used in both materials and process monitoring. Techniques such as reflectance difference, ellipsometry, reflectance, absorption, light scattering, photoreflectance, Raman scattering and thermal wave modulated reflectance were shown to be powerful probes of various materials properties. The materials properties that were probed included surface stoichiometry and morphology, etch damage, Fermi level pinning position and thin film properties such as thickness, alloy content, and interfacial roughness. Real time diagnostics such as ellipsometry and reflectance difference were shown to be sensitive tools of materials properties during processing
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1994
- Accession Number
- ADA282810
Entities
People
- F. H. Pollak
- G. Larrabee
- G. M. Crean
- O. J. Glembocki
- S. W. Pang
Organizations
- Materials Research Society