Thermal Stability of Pseudomorphic In(x)Ga(1-x)As/In(y)Al(1-y)As/InP heterostructures

Abstract

We investigated the thermal stability of strained layers of InGaAs and InAlAs on InP. Epilayer and interface quality was assessed by high- resolution x-ray diffraction and electron mobility measurements as a function of annealing cycle. Both techniques show that high-quality, pseudomorphic heterostructures are thermally stable at annealing temperatures of up to 700-800 deg C, despite exceeding the Matthews-Blakeslee critical layer thickness. These findings suggest that layers exceeding the predicted critical thickness may be successfully used in device heterostructures.

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Document Details

Document Type
Technical Report
Publication Date
Apr 22, 1993
Accession Number
ADA283057

Entities

People

  • Brian R. Bennett
  • Jesús A. del Alamo

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Bragg Angle
  • Electron Mobility
  • Electrons
  • Epitaxial Growth
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • High Resolution
  • Low Temperature
  • Materials
  • Measurement
  • Mobility
  • Quantum Wells
  • Semiconductors
  • Thermal Stability
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics