Origin of Optical Anisotropy in Strained In(x)Ga(1-x)As/InP and In(y)Al(1-y)As/InP Heterostructures,
Abstract
Optical anisotropy in mismatched In(x)Ga(1-x)As/InP and In(y)Al(1-y)As/InP heterostructures has been investigated by variable azimuthal angle ellipsometry and reflectance difference spectroscopy. The two approaches are shown to yield strongly correlated results. A comparison to high resolution x-ray diffraction, transmission electron microscopy, and atomic force microscopy studies indicates that large optical anisotropies are associated with surface roughening that results from three dimensional growth. Our findings demonstrate that fast and non-destructive measurements of optical anisotropy can provide important information about the growth mode and crystalline quality of strained epitaxial layers
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 10, 1993
- Accession Number
- ADA283152
Entities
People
- A. Cornet
- Brian R. Bennett
- F. Peiro
- J. A. Del Alamo
- M. T. Sinn
Organizations
- United States Naval Research Laboratory