Ion Implantation of 3He in Tantalum for Use in a Low Energy Deuteron Polarization Analyzer

Abstract

The implantation of tantalum foils with He(3) has been accomplished for implant energies from 7 to 20 keV and doses from 1.5-29.3 Coulombs/sq cm. Implant thicknesses are not consistent with the Zero order implantation theory, but are in agreement with previous experiment. Thickness dependence upon implant energy, dose, and temperature are studied. The foils were bombarded with deuterons to determine target thicknesses, thickness lifetimes, and to study the properties of the tensor analyzing power of the (3)He(d,p)He(4) reaction near its 430 keV resonance. Ayy is measured and appears energy independent and isotropic in the energy range 222-322 keV.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1994
Accession Number
ADA283172

Entities

People

  • Andrew C. Hird
  • E. J. Ludwig
  • K. A. Fletcher
  • Z. Ayer

Organizations

  • Air Force Institute of Technology

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Air Force Facilities
  • Analyzers
  • Atoms
  • Detectors
  • Deuteron Beams
  • Deuterons
  • Diffusion
  • Implantation
  • Ion Implantation
  • Ions
  • Measurement
  • Polarization
  • Refractory Metals
  • Tantalum
  • Thermal Diffusion

Fields of Study

  • Physics

Readers

  • Solar Physics
  • Thin Film Deposition Science.